Device Benchmark Comparisons via Kinetic, Hydrodynamic, and High-Field Models
نویسندگان
چکیده
This paper describes benchmark comparisons for a GaAs n+ − n − n+ diode. A global kinetic model is simulated, and compared with various realizations of the hydrodynamic model, depending on mobility calibration. Finally, the channel region alone is simulated, with interior boundary conditions derived from the kinetic model, by use of the high-field (augmented drift-diffusion) model.
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تاریخ انتشار 2000